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TPCP8401 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TPCP8401
Description  TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ??/ ?-MOS ??
PDF  10 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8401 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TPCP8401
2006-11-13
4
N-ch
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±1
μA
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 0.1 mA, VGS = 0 V
20
⎯
⎯
V
Gate threshold voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.6
⎯
1.1
V
VGS = 1.5 V, ID = 1 mA
⎯
5.2
15
VGS = 2.5 V, ID = 10 mA
⎯
2.2
4
Drain-source ON resistance
RDS (ON)
VGS = 4 V, ID = 10 mA
⎯
1.5
3
Ω
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 10 mA
40
⎯
⎯
mS
Turn-on time
ton
⎯
70
⎯
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
⎯
125
⎯
ns
Input capacitance
Ciss
⎯
9.3
⎯
Reverse transfer capacitance
Crss
⎯
4.5
⎯
Output capacitance
Coss
VDS = 3 V, VGS = 0 V, f = 1 MHz
⎯
9.8
⎯
pF
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
100
μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device. The VGS recommended voltage for turning on this
product is 1.5 V or higher.
VDD ∼− 3 V
0 V
VGS
2.5 V
ID = 10 mA
VOUT



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