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GD400HTX120P6H Datasheet(PDF) 3 Page - StarPower Europe AG |
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GD400HTX120P6H Datasheet(HTML) 3 Page - StarPower Europe AG |
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3 / 10 page ![]() GD400HTX120P6H IGBT Module ©2023 STARPOWER Semiconductor Ltd. 3/17/2023 3/10 B04 IGBT Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=250A,VGE=15V, Tj=25 oC 1.45 1.80 V IC=250A,VGE=15V, Tj=125 oC 1.65 IC=250A,VGE=15V, Tj=150 oC 1.70 IC=380A,VGE=15V, Tj=25 oC 1.70 IC=380A,VGE=15V, Tj=150 oC 2.15 VGE(th) Gate-Emitter Threshold Voltage IC=9.75mA,VCE=VGE, Tj=25 oC 5.6 6.2 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 2.4 Ω Cies Input Capacitance VCE=25V,f=100kHz, VGE=0V 33.6 nF Coes Output Capacitance 1.43 nF Cres Reverse Transfer Capacitance 0.82 nF QG Gate Charge VCE =600V,IC =250A, VGE=-8…+15V 1.98 μC td(on) Turn-On Delay Time VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V, Tj=25 oC 231 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 545 ns tf Fall Time 172 ns Eon Turn-On Switching Loss 19.6 mJ Eoff Turn-Off Switching Loss 23.2 mJ td(on) Turn-On Delay Time VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V, Tj=125 oC 241 ns tr Rise Time 57 ns td(off) Turn-Off Delay Time 619 ns tf Fall Time 247 ns Eon Turn-On Switching Loss 26.6 mJ Eoff Turn-Off Switching Loss 28.7 mJ td(on) Turn-On Delay Time VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V, Tj=150 oC 245 ns tr Rise Time 57 ns td(off) Turn-Off Delay Time 641 ns tf Fall Time 269 ns Eon Turn-On Switching Loss 30.1 mJ Eoff Turn-Off Switching Loss 30.9 mJ ISC SC Data tP≤6μs,VGE=15V, Tj=150 oC,VCC=800V, VCEM≤1200V 1200 A |
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