MP4304 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

MP4304

2006-10-27

Marking

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance from junction to

ambient

(4-device operation, Ta = 25°C)

ΣRth (j-a)

28.4

°C/W

Maximum lead temperature for

soldering purposes

(3.2 mm from case for 10 s)

260

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 80 V, IE = 0 A

―

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0 A

―

μA

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0 A

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0 A

―

hFE (1)

VCE = 2 V, IC = 1 A

600

―

DC current gain

hFE (2)

VCE = 2 V, IC = 2 A

150

―

Collector-emitter

VCE (sat)

IC = 1.5 A, IB = 15 mA

―

0.25

0.5

Saturation voltage

Base-emitter

VBE (sat)

IC = 1.5 A, IB = 15 mA

―

1.2

Transition frequency

VCE = 2 V, IC = 0.1 A

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1 MHz

―

Turn-on time

ton

―

0.4

―

Storage time

tstg

―

2.6

―

Switching time

Fall time

IB1 = −IB2 = 15 mA, duty cycle ≤ 1%

―

1.3

―

μs

Flyback-Diode Rating and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Maximum forward current

IFM

―

Reverse current

VR = 80 V

―

0.4

μA

Reverse voltage

IR = 100 μA

―

Forward voltage

IF = 1 A

―

1.5

20 μs

VCC = 30 V

Output

IB2

IB1

Input

MP4304

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

MP4304 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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