FDP52N20

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2

ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)

Symbol

Parameter

Value

Unit

VDSS

Drain to Source Voltage

200

V

VGSS

Gate to Source Voltage

±30

V

ID

Drain Current

Continuous (TC = 25°C)

52

A

Continuous (TC = 100°C)

33

IDM

Drain Current

Pulsed (Note 1)

208

A

EAS

Single Pulsed Avalanche Energy (Note 2)

2520

mJ

IAR

Avalanche Current (Note 1)

52

A

EAR

Repetitive Avalanche Energy (Note 1)

35.7

mJ

dv/dt

Peak Diode Recovery dv/dt (Note 3)

4.5

V/ns

PD

Power Dissipation

(TC = 25°C)

357

W

Derate Above 25°C

2.86

W/°C

TJ, TSTG

Operating and Storage Temperature Range

−55 to +150

°C

TL

Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s

300

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 1.4 mH, IAS = 52 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.

3. ISD ≤ 52 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature typical characteristics.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

RqJC

Thermal Resistance, Junction to Case, Max.

0.35

_C/W

RqJA

Thermal Resistance, Junction to Ambient, Max.

62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number

Top Marking

Package

Packing Method

Reel Size

Tape Width

Quantity

FDP52N20

FDP52N20

TO−220

Tube

N/A

N/A

50 Units