Transistors

Publication date : October 2008

SJC00421AED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC1384

Silicon NPN epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SA0684



Features



Low collector-emitter saturation voltage VCE(sat)



Complementary pair with 2SA0684



Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

60

V

Collector-emitter voltage (Base open)

VCEO

50

V

Emitter-base voltage (Collector open)

VEBO

5

V

Collector current

IC

1

A

Peak collector current

ICP

1.5

A

Collector power dissipation

PC

1

W

Junction temperature

Tj

150

°

C

Storage temperature

Tstg

–55 to +150

°

C



Electrical Characteristics Ta = 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = 10 mA, IE = 0

60

V

Collector-emitter voltage (Base open)

VCEO

IC = 2 mA, IB = 0

50

V

Emitter-base voltage (Collector open)

VEBO

IE = 10 mA, IC = 0

5

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 20 V, IE = 0

0.1

m

A

Forward current transfer ratio *1

hFE1 *2 VCE = 10 V, IC = 500 mA

85

340



hFE2

VCE = 5 V, IC = 1 A

50

Collector-emitter saturation voltage

VCE(sat) IC = 500 mA, IB = 50 mA

0.2

0.4

V

Base-emitter saturation voltage

VBE(sat) IC = 500 mA, IB = 50 mA

0.85

1.20

V

Transition frequency

fT

VCB = 10 V, IE = –50 mA, f = 200 MHz

200

MHz

Collector output capacitance

(Common base, input open circuited)

Cre

VCB = 10 V, IE = 0, f = 1 MHz

11

20

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank

Q

R

S

hFE1

85 to 170

120 to 240

170 to 340



Package



Code

TO-92L-A1



Pin Name

1. Emitter

2. Collector

3. Base