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CUS01 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # CUS01
Description  Portable Equipment Battery Application
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CUS01 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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CUS01
2006-11-13
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS01
Portable Equipment Battery Application
• Forward voltage: VFM = 0.37 V (max) @IF = 0.7 A
• Average forward current: IF (AV) = 1.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“US−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF (AV)
1.0
(Note 1)
A
Peak one cycle surge forward current
IFSM
20 (50 Hz)
A
Junction temperature
Tj
−40 to 125
°C
Storage temperature range
Tstg
−40 to 150
°C
Note 1: TI = 86°C: Rectangular waveform (α = 180°), VR = 15 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM = 0.1 A
―
0.25
―
VFM (2)
IFM = 0.7 A
―
0.33
0.37
Peak forward voltage
VFM (3)
IFM = 1.0 A
―
0.39
―
V
IRRM (1)
VRRM = 5 V
―
50
―
μA
Repetitive peak reverse current
IRRM (2)
VRRM = 30 V
―
0.5
1.5
mA
Junction capacitance
Cj
VR = 10 V, f = 1.0 MHz
―
40
―
pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
―
―
75
Thermal resistance
(junction to ambient)
Rth (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
―
―
150
°C/W
Thermal resistance (junction to lead)
Rth (j-I)
Junction to lead of cathode side
―
―
30
°C/W
Unit: mm
JEDEC
―
JEITA
TOSHIBA
3-2B1A
Weight: 0.004 g (typ.)


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