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TLP830 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TLP830
Description  Infrared LED Phototransistor
PDF  9 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP830 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLP830(F)
2007-10-01
2
Product Indication
Monthly production lot
Production month
(Jan.-Dec. are indicated
by alphabetes of A-L)
Production year
(last digit of a.d. is indicated)
Operating Ranges
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
―
5
24
V
Forward current
IF
―
―
25
mA
Operating temperature
Topr
−10
―
75
°C
Opto Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.00
1.15
1.30
V
Reverse current
IR
VR = 5 V
―
―
10
μA
Peak emission wavelength
λP
IF = 10 mA
―
940
―
nm
Dark current
ID
VCE = 24 V, IF = 0
―
―
0.1
μA
Peak sensitivity wavelength
λP
―
870
―
nm
Current transfer ratio
IC/IF
VCE = 2 V, IF = 10 mA
3
―
20
%
Collector
−emitter
saturation voltage
VCE (sat)
IF = 20 mA, IC = 0.3 mA
―
0.1
0.35
V
Rise time
tr
―
15
―
Fall time
tf
VCC = 5 V, IC = 1 mA
RL = 1 kΩ
―
15
―
Response time (1)
t1
―
―
80
Switching
times
Response time (2)
t2
VCC = 4.4 V, IC = 13 mA
RL = 47 kΩ
(Note)
―
―
800
μs
Note: t1, t2 test condition
VOUT
IF
2.5V
0.8V
t1
t2
RL=47kΩ
IF=13mA
VOUT
VCC=4.4V



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