M29W400DT datasheet(22/48 Pages) STMICROELECTRONICS

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Command interface

M29W400DT, M29W400DB

22/48

will be suspended. If the Erase Suspend command is issued during the period when the

memory is waiting for an additional block (before the Program/Erase controller starts) then

the Erase is suspended immediately and will start immediately when the Erase Resume

command is issued. It is not possible to select any further blocks to erase after the Erase

Resume.

During Erase Suspend it is possible to Read and Program cells in blocks that are not being

erased; both Read and Program operations behave as normal on these blocks. If any

attempt is made to program in a protected block or in the suspended block then the Program

command is ignored and the data remains unchanged. The Status Register is not read and

no error condition is given. Reading from blocks that are being erased will output the Status

It is also possible to issue the Auto Select and Unlock Bypass commands during an Erase

Suspend. The Read/Reset command must be issued to return the device to Read Array

mode before the Resume command will be accepted.

4.10

Erase Resume command

The Erase Resume command must be used to restart the Program/Erase controller from

Erase Suspend. An erase can be suspended and resumed more than once.

4.11

Block Protect and Chip Unprotect commands

Each block can be separately protected against accidental program or erase. The whole

chip can be unprotected to allow the data inside the blocks to be changed.

Block Protect and Chip Unprotect operations are described in Appendix B: Block protection.

Table 4.

Program, Erase times and Program, Erase endurance cycles

Parameter

Min

Typ(1)(2)

Typical values measured at room temperature and nominal voltages.

Max(2)

Sampled, but not 100% tested.

Unit

Chip Erase (all bits in the memory set to ‘0’)

2.5

Chip Erase

35(3)

Maximum value measured at worst case conditions for both temperature and VCC after 100,000

Program/Erase cycles.

Block Erase (64 Kbytes)

0.8

6(4)

Maximum value measured at worst case conditions for both temperature and VCC.

Program (byte or word)

200(3)

µs

Chip Program (byte by byte)

5.5

30(3)

Chip Program (word by word)

2.8

15(3)

Erase Suspend latency time

25(4)

µs

Program/Erase cycles (per block)

100,000

cycles

Data retention

years

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