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ISL72028ASEH Datasheet(PDF) 10 Page - Renesas Technology Corp |
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ISL72028ASEH Datasheet(HTML) 10 Page - Renesas Technology Corp |
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10 / 25 page ![]() FN8863 Rev.1.00 Page 10 of 25 Jul 27, 2017 ISL72028ASEH 2. Specifications Output Skew tSKEW2 RS = 10kΩ, (|tPHL - tPLH|), Figures 13 and 14 Full - 60 275 ns Output Skew tSKEW3 RS = 50kΩ, (|tPHL - tPLH|), Figures 13 and 14 Full - 75 400 ns Output Rise Time tr1 RS = 0V, (fast speed - 1Mbps) Figures 13 and 14 Full 15 30 85 ns Output Fall Time tf1 Full 10 20 65 ns Output Rise Time tr2 RS = 10kΩ, (medium speed - 500kbps) Figures 13 and 14 Full 125 250 550 ns Output Fall Time tf2 Full 100 250 425 ns Output Rise Time tr3 RS = 50kΩ, (slow speed - 250kbps) Figures 13 and 14 Full 200 360 800 ns Output Fall Time tf3 Full 175 390 600 ns Total Loop Delay, Driver Input to Receiver Output, Recessive to Dominant t(LOOP1) RS = 0V, Figures 18 and 19 Full - 140 225 ns RS = 10kΩ, Figures 18 and 19 Full - 380 600 ns RS = 50kΩ, Figures 18 and 19 Full - 500 800 ns Total Loop Delay, Driver Input to Receiver Output, Dominant to Recessive t(LOOP2) RS = 0V, Figures 18 and 19 Full - 160 285 ns RS = 10kΩ, Figures 18 and 19 Full - 450 700 ns RS = 50kΩ, Figures 18 and 19 Full - 575 950 ns Low Power Shutdown to Valid Dominant Time tL-DOM) Figures 20 and 21, (Note 11) Full - 6 15 µs Receiver Switching Characteristics Propagation Delay LOW to HIGH tPLH Figures 15, 16, and 17 Full - 50 110 ns Propagation Delay HIGH to LOW tPHL Figures 15, 16, and 17 Full - 50 110 ns Rx Skew tSKEW1 |(tPHL - tPLH)|, Figures 15, 16, and 17 Full - 2 35 ns Rx Rise Time tr Figures 15, 16, and 17 Full - 2 - ns Rx Fall Time tf Figures 15, 16, and 17 Full - 2 - ns VREF/RS Pin Characteristics VREF Pin Voltage VREF -5µA < IREF < 5µA Full 0.45xVCC 1.60 0.55xVCC V -50µA < IREF < 50µA Full 0.4xVCC 1.6 0.6xVCC V RS Pin Input Current IRS(H) RS = 0.75 x VCC Full -10.0 -0.2 - µA IRS(L) VRS = 0V Full -450 -125 0 µA Notes: 7. All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground unless otherwise specified. 8. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, and +125°C, unless otherwise specified. 9. Typical values are at 3.3V. Parameters with a single entry in the “TYP” column apply to 3.3V. Typical values shown are not guaranteed. 10. Parameter included in functional testing. 11. Performed during the 100% screening operations across the full operating temperature range. Not performed as part of TCI Group E and Group C. Radiation characterization testing performed as part of the initial release and any major changes in design. Test Conditions: VCC = 3V to 3.6V; typical values are at TA = +25°C (Note 9), unless otherwise specified (Note 7). Boldface limits apply across the operating temperature range, -55°C to +125°C, over a total ionizing dose of 75krad(Si) at +25°C with exposure at a low dose rate of <10mrad(Si)/s, and over a total ionizing dose of 100krad(SI) at +25°C with exposure of a high dose rate of 50krad(SI)/s to 300krad(SI)/s. (Continued) Parameter Symbol Test Conditions Temp (°C) Min (Note 8) Typ (Note 9) Max (Note 8) Unit |
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