CSD87384M

SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015

www.ti.com

5.4 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

Junction-to-ambient thermal resistance (Min Cu) (1)

153

RθJA

Junction-to-ambient thermal resistance (Max Cu) (2)(1)

67

°C/W

Junction-to-case thermal resistance (Top of package) (1)

3.0

RθJC

Junction-to-case thermal resistance (PGND Pin)

(1)

1.25

(1)

RθJC is determined with the device mounted on a 1 inch

2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch

(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board

design.

(2)

Device mounted on FR4 material with 1 inch2 (6.45 cm2) Cu.

5.5 Electrical Characteristics

TA = 25°C (unless otherwise stated)

Q1 Control FET

Q2 Sync FET

PARAMETER

TEST CONDITIONS

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = 250 μA

30

30

V

Drain-to-Source Leakage

IDSS

VGS = 0 V, VDS = 24 V

1

1

μA

Current

Gate-to-Source Leakage

IGSS

VDS = 0 V, VGS = 10 V

100

100

nA

Current

Gate-to-Source Threshold

VGS(th)

VDS = VGS, IDS = 250 μA

1.1

1.9

1.1

1.7

V

Voltage

VGS = 4.5 V, IDS = 25 A

7.5

8.9

2.15

2.6

RDS(on)

Drain-to-Source On-Impedance

m

Ω

VGS = 8 V, IDS = 25 A

6.4

7.7

1.95

2.4

gƒs

Transconductance

VDS = 10 V, IDS = 25 A

67

240

S

DYNAMIC CHARACTERISTICS

CISS

Input Capacitance (1)

884

1150

3760

4890

pF

COSS

Output Capacitance (1)

VGS = 0 V, VDS = 15 V,

452

588

1110

1440

pF

f = 1MHz

Reverse Transfer Capacitance

CRSS

19.4

25.2

87

114

pF

(1)

RG

Series Gate Resistance (1)

1.0

2.0

0.7

1.4

Ω

Qg

Gate Charge Total (4.5 V) (1)

7.1

9.2

31

40

nC

Qgd

Gate Charge – Gate-to-Drain

1.5

8.6

nC

VDS = 15 V,

IDS = 25 A

Qgs

Gate Charge – Gate-to-Source

2.7

8.6

nC

Qg(th)

Gate Charge at Vth

1.3

5.4

nC

QOSS

Output Charge

VDD = 12 V, VGS = 0 V

11.3

37

nC

td(on)

Turn On Delay Time

8.7

17.5

ns

tr

Rise Time

56

49

ns

VDS = 15 V, VGS = 4.5 V,

IDS = 25 A, RG = 2 Ω

td(off)

Turn-Off Delay Time

14

29

ns

tƒ

Fall Time

7.6

8.2

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

IDS = 25 A, VGS = 0 V

0.85

0.80

V

Qrr

Reverse Recovery Charge

21

51

nC

Vdd = 15 V, IF = 25 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

21

32

ns

(1)

Specified by design

4

Submit Documentation Feedback

Copyright © 2013–2015, Texas Instruments Incorporated