LM4921

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SNAS178E – JULY 2003 – REVISED MAY 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

Input Voltage

-0.3V to VDD + 0.3V

Power Dissipation(3)

Internally Limited

Human body model(4)

2000V

ESD Susceptibility

Machine model(5)

200V

Junction Temperature

150°C

Thermal Resistance

θJA

60°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication

of device performance.

(2)

All voltages are measured with respect to the GND pin, unless otherwise specified.

(3)

The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature

TA. The maximum allowable power dissipation is PDMAX = (TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever

is lower.

(4)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(5)

Machine Model, 220pF – 240pF discharged through all pins.

Operating Ratings

Temperature Range

TMIN ≤ TA ≤ TMAX

−40°C ≤ TA ≤ 85°C

DVDD

2.6V

≤ DVDD ≤ 5.0V

Supply Voltage

AVDD

2.6V

≤ AVDD ≤ 5.5V

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