MMF80R650P Datasheet

Jul. 2021. Revision 1.2

Magnachip Semiconductor Ltd.

1

Parameter

Value

Unit

VDS @ Tj,max

850

V

RDS(on),max

0.65

Ω

VTH,typ

3

V

ID

8

A

Qg,typ

25.8

nC

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMF80R650PTH

80R650P

-

55 ~ 150oC

TO-220F

Tube

Compliant

MMF80R650P

800V 0.65Ω N-channel MOSFET



Description

MMF80R650P is power MOSFET using Magnachip’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.



Features



Low Power Loss by High Speed Switching and Low On-Resistance



100% Avalanche Tested



Green Package – Pb Free Plating, Halogen Free



Key Parameters



Ordering Information



Applications



PFC Power Supply Stages



Switching Applications



Adapter

D

G

S

G

D

S



Package & Internal Circuit