MMF80R650P Datasheet

Jul. 2021. Revision 1.2

Magnachip Semiconductor Ltd.

3

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain – Source

Breakdown voltage

V(BR)DSS

800

-

-

V

VGS = 0V, ID = 0.25mA

Gate Threshold Voltage

VGS(th)

2.0

3.0

4.0

V

VDS = VGS, ID = 0.25mA

Zero Gate Voltage

Drain Current

IDSS

-

-

1

uA

VDS = 800V, VGS = 0V

Gate Leakage Current

IGSS

-

-

100

nA

VGS = ±30V, VDS = 0V

Drain-Source On

State Resistance

RDS(ON)

-

0.56

0.65

Ω

VGS = 10V, ID = 5.1A

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Input Capacitance

Ciss

-

823

-

pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

-

689

-

Reverse Transfer Capacitance

Crss

-

29

-

Effective Output Capacitance

Energy Related (6)

Co(er)

-

23.7

-

VDS = 0V to 640V,

VGS = 0V, f = 1.0MHz

Turn On Delay Time

td(on)

-

15.2

-

ns

VGS = 10V, RG = 25Ω,

VDS = 400V, ID = 8.0A

Rise Time

tr

-

29.6

-

Turn Off Delay Time

td(off)

-

76.4

-

Fall Time

tf

-

28.0

-

Total Gate Charge

Qg

-

25.8

-

nC

VGS = 10V, VDS = 640V,

ID = 8.0A

Gate – Source Charge

Qgs

-

5.0

-

Gate – Drain Charge

Qgd

-

11.1

-

Gate Resistance

RG

-

2.25

-

Ω

VGS = 0V, f = 1.0MHz

5)

Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS



Static Characteristics (Tc=25 oC unless otherwise specified)



Dynamic Characteristics (Tc=25 oC unless otherwise specified)