REV 1.0

1

Aug-19-2009

N-Channel Enhancement Mode

Field Effect Transistor

PB210BD

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±20

V

TC = 25 °C

10

Continuous Drain Current

TC = 100 °C

ID

6

Pulsed Drain Current

1

IDM

40

Avalanche Current

IAs

18

A

Avalanche Energy

L = 0.1mH

EAS

16.5

mJ

TC = 25 °C

41

Power Dissipation

TC = 100 °C

PD

17

W

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RθJC

3

Junction-to-Ambient

RθJA

62.5

°C / W

1Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250µA

100

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

1

1.5

2

V

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

VDS = 80V, VGS = 0V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 80V, VGS = 0V, TJ = 125 °C

10

µA

On-State Drain Current

1

ID(ON)

VDS = 10V, VGS = 10V

40

A

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

100V

230mΩ

10A

G

D

S