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PB210BD Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # PB210BD
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PB210BD Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV 1.0
2
Aug-19-2009
N-Channel Enhancement Mode
Field Effect Transistor
PB210BD
TO-252
Halogen-Free & Lead-Free
NIKO-SEM
VGS = 10V, ID = 6A
191
230
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 5V, ID = 6A
203
240
mΩ
Forward Transconductance
1
gfs
VDS = 10V, ID = 6A
10
S
DYNAMIC
Input Capacitance
Ciss
802
1002
Output Capacitance
Coss
80
100
Reverse Transfer Capacitance
Crss
VGS = 0V, VDS = 25V, f = 1MHz
41
51
pF
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
2.5
3.1
Ω
Total Gate Charge
2
Qg
15
Gate-Source Charge
2
Qgs
2
Gate-Drain Charge
2
Qgd
VDS =50V, VGS = 10V,
ID = 6A
4
nC
Turn-On Delay Time
2
td(on)
16
Rise Time
2
tr
VDD = 50V,
330
Turn-Off Delay Time
2
td(off)
ID ≅ 6A, VGS = 10V, RGS = 6Ω
39
Fall Time
2
tf
111
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
10
A
Forward Voltage
1
VSD
IF = 6A, VGS = 0V
1.4
V
Reverse Recovery Time
trr
75
nS
Reverse Recovery Charge
Qrr
IF = 6A, dI/dt=500A/µs
0.17
nC
1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2Independent of operating temperature.



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