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AUG-19-2004
Dual N-Channel Enhancement Mode
Field Effect Transistor
P5506HVG
SOP-8
Lead-Free
NIKO-SEM
On-State Drain Current
1
ID(ON)
VDS = 5V, VGS = 10V
20
A
VGS = 4.5V, ID = 4A
55
75
Drain-Source
On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 4.5A
42
55
mΩ
Forward Transconductance
1
gfs
VDS = 10V, ID = 4.5A
14
S
DYNAMIC
Input Capacitance
Ciss
650
Output Capacitance
Coss
80
Reverse Transfer Capacitance
Crss
VGS = 0V, VDS = 25V, f = 1MHz
35
pF
Total Gate Charge
2
Qg
12.5
18
Gate-Source Charge
2
Qgs
2.4
Gate-Drain Charge
2
Qgd
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 4.5A
2.6
nC
Turn-On Delay Time
2
td(on)
11
20
Rise Time
2
tr
8
18
Turn-Off Delay Time
2
td(off)
19
35
Fall Time
2
tf
VDD = 30V
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
6
15
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
1.3
Pulsed Current
3
ISM
2.6
A
Forward Voltage
1
VSD
IF = IS A, VGS = 0V
1
V
1Pulse test : Pulse Width
≤ 300 µsec, Duty Cycle ≤ 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P5506HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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