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AUG-19-2004
Dual N-Channel Enhancement Mode
Field Effect Transistor
P5506HVG
SOP-8
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
TC = 25 °C
4.5
Continuous Drain Current
TC = 70 °C
ID
4
Pulsed Drain Current
1
IDM
20
A
TC = 25 °C
2
Power Dissipation
TC = 70 °C
PD
1.3
W
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
RθJA
62.5
°C / W
1Pulse width limited by maximum junction temperature.
2Duty cycle
≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
60
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.0
1.5
2.5
V
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
±100
nA
VDS = 48V, VGS = 0V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 40V, VGS = 0V, TJ = 55 °C
10
µA
G : GATE
D : DRAIN
S : SOURCE
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
60
55mΩ
4.5A
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