N-Channel Enhancement

Mode Power MOSFET

SIMFSBSS123T2

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone:

Fax:

+44 (0) 1455 556565

+44 (0) 1455 552612

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number:

Issue:

Page:

11507

1

2 of 3

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0

ID = 250µA

100

103

V

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 1.0mA

0.8

1.68

2.0

V

IGSS

Gate-Source Leakage Current

VGS = ±20V

VDS = 0

±0.16

±50

nA

IDSS

Zero Gate Voltage

Drain Current

VDS = 20V

VGS = 0

0.003

10

nA

VDS = 100V

VGS = 0

0.017

1.0

μA

TC = 125°C

0.059

60

ID(ON)

(3)

On-State Drain Current

VDS = 5.0V

VGS = 10V

0.68

>1.0

A

RDS(on)

(3)

Static Drain-Source

On-State Resistance

VGS = 4.5V

ID = 0.17A

1.28

10

Ω

VGS = 4.5V

ID = 0.43A

1.3

VGS = 10V

ID = 0.17A

1.19

6.0

TC = 125°C

1.78

12

VGS = 10V

ID = 0.43A

1.2

gfs

(3)

Forward Transconductance

VDS = 10V

ID = 0.17A

80

646

mƱ

VDS = 10V

ID = 0.43A

940

VSD

(3)

Body Diode Forward Voltage

VGS = 0

IS = 0.34A

0.81

1.3

V

VGS = 0

IS = 0.575A

0.88

trr

(4)

Body Diode Reverse Recovery

IF = 0.17A

diF/dt = 100A/µs

11

nS

Qrr

(4)

Body Diode Reverse Recovery

Charge

3

nC

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

73

pF

Coss

Output Capacitance

VDS = 25V

7

Crss

Reverse Transfer Capacitance

f = 1.0MHz

3.4

td

Turn-On Delay Time

VDD = 30V

3

3.4

ns

tr

Turn-On Rise Time

VGS = 10V

2

18

ts

Turn-Off Storage Time

ID = 0.28A

7

31

tf

Turn-Off Fall Time

RG = 6Ω

2

5

Notes

(1) Limited by maximum junction temperature

(2) 10ms Pulse

(3) Pulse Width ≤ 380us, δ ≤ 2%

(4) By Design. Parameter not tested.