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STM32F205RFT6 Datasheet(PDF) 93 Page - STMicroelectronics |
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STM32F205RFT6 Datasheet(HTML) 93 Page - STMicroelectronics |
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93 / 184 page  DocID15818 Rev 15 93/184 STM32F20xxx Electrical characteristics 183 Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 33. Typical application with a 32.768 kHz crystal 6.3.9 Internal clock source characteristics The parameters given in Table 32 and Table 33 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. High-speed internal (HSI) RC oscillator Table 31. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) 1. Guaranteed by design, not tested in production. Symbol Parameter Conditions Min Typ Max Unit RF Feedback resistor - - 18.4 - M Ω IDD LSE current consumption - - - 1 µA gm Oscillator Transconductance - 2.8 - - µA/V tSU(LSE)(2) 2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer startup time VDD is stabilized - 2 - s Table 32. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user-trimming step(2) 2. Guaranteed by design, not tested in production. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. – 8 - 4.5 % TA = –10 to 85 °C(3) – 4 - 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. – 1 - 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4.0 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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