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STM32F205RFT6 Datasheet(PDF) 121 Page - STMicroelectronics |
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STM32F205RFT6 Datasheet(HTML) 121 Page - STMicroelectronics |
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121 / 184 page ![]() DocID15818 Rev 15 121/184 STM32F20xxx Electrical characteristics 183 Figure 47. USB OTG FS timings: definition of data signal rise and fall time USB HS characteristics Table 59 shows the USB HS operating voltage. Table 58. USB OTG FS electrical characteristics(1) 1. Guaranteed by design, not tested in production. Driver characteristics Symbol Parameter Conditions Min Max Unit tr Rise time(2) 2. Measured from 10% to 90% of the data signal. For more detailed informations, refer to USB Specification - Chapter 7 (version 2.0). CL = 50 pF 420 ns tf Fall time(2) CL = 50 pF 4 20 ns trfm Rise/fall time matching tr/tf 90 110 % VCRS Output signal crossover voltage - 1.3 2.0 V Table 59. USB HS DC electrical characteristics Symbol Parameter Min(1) 1. All the voltages are measured from the local ground potential. Max(1) Unit Input level VDD USB OTG HS operating voltage 2.7 3.6 V Table 60. Clock timing parameters Parameter(1) 1. Guaranteed by design, not tested in production. Symbol Min Nominal Max Unit Frequency (first transition) 8-bit ±10% FSTART_8BIT 54 60 66 MHz Frequency (steady state) ±500 ppm FSTEADY 59.97 60 60.03 MHz Duty cycle (first transition) 8-bit ±10% DSTART_8BIT 40 50 60 % Duty cycle (steady state) ±500 ppm DSTEADY 49.975 50 50.025 % Time to reach the steady state frequency and duty cycle after the first transition TSTEADY -- 1.4 ms Clock startup time after the de-assertion of SuspendM Peripheral TSTART_DEV -- 5.6 ms Host TSTART_HOST -- - PHY preparation time after the first transition of the input clock TPREP -- - µs ai14137 tf Differen tial Data L ines VSS VCRS tr Crossover points |
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