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STM32F205RFT6 Datasheet(PDF) 136 Page - STMicroelectronics |
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STM32F205RFT6 Datasheet(HTML) 136 Page - STMicroelectronics |
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136 / 184 page  Electrical characteristics STM32F20xxx 136/184 DocID15818 Rev 15 Figure 60. Asynchronous multiplexed PSRAM/NOR write waveforms th(Data_NE) Data hold time after FSMC_NEx high 0 - ns th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns 1. CL = 30 pF. 2. Guaranteed by characterization results, not tested in production. Table 75. Asynchronous multiplexed PSRAM/NOR write timings(1)(2) Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 4THCLK-1 4THCLK+1 ns tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK- 1 THCLK ns tw(NWE) FSMC_NWE low tim e 2THCLK 2THCLK+1 ns th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK- 1 - ns tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1 2 ns tw(NADV) FSMC_NADV low time THCLK– 2 THCLK+ 2 ns th(AD_NADV) FSMC_AD(adress) valid hold time after FSMC_NADV high) THCLK -ns Table 74. Asynchronous multiplexed PSRAM/NOR read timings(1)(2) (continued) Symbol Parameter Min Max Unit |
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