4

LF353

SLOS012C – MARCH 1987 – REVISED MARCH 2016

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Copyright © 1987–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VCC+

Supply voltage

18

V

VCC–

Supply voltage

–18

V

VID

Differential input voltage

±30

V

VI

Input voltage(2)

±15

V

Duration of output short circuit

Unlimited

s

Continuous total power dissipation

500

mW

Lead temperature 1.6 mm (1/16 inch) from case for 10 s

260

°C

TJ

Junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VCC+

Supply voltage

3.5

18

V

VCC–

Supply voltage

–3.5

–18

V

VCM

Common-mode voltage

VCC– + 4

VCC+ – 4

V

TA

Operating temperature

0

70

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

THERMAL METRIC(1)

LF353

UNIT

D (SOIC)

P (PDIP)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

106.6

55.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

51.5

45

°C/W

RθJB

Junction-to-board thermal resistance

46.5

32.2

°C/W

ψJT

Junction-to-top characterization parameter

9.8

22.6

°C/W

ψJB

Junction-to-board characterization parameter

46.1

32.2

°C/W