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ABSOLUTE MAXIMUM RATINGS

(TOP VIEW)

RGT PACKAGE

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12

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16 15 14 13

NC = No connect

VS−

VS+

VOUT

THS4303

SLOS421B – NOVEMBER 2003 – REVISED JANUARY 2005

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated

circuits be handled with appropriate precautions. Failure to observe proper handling and installation

procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision

integrated circuits may be more susceptible to damage because very small parametric changes could

cause the device not to meet its published specifications.

over operating free-air temperature range unless otherwise noted(1)

UNIT

VS

Supply voltage

6 V

VI

Input voltage

±V

S

IO

Output current

200 mA

Continuous power dissipation See Dissipation Rating Table

TJ((2))

Maximum junction temperature

150

°C

TJ((3))

Maximum junction temperature, continuous operation, longterm reliability

125

°C

TA

Operating free-air temperature range

–40

°C to 85°C

Tstg

Storage temperature range

–65

°C to 150°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

300

°C

ESD ratings:

HBM

3000

CDM

1500

MM

200

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

The THS4303 device may incorporate a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be connected to a

thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature

which can permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the

PowerPAD thermally enhanced package.

(3)

The absolute maximum temperature under any condition is limited by the constraints of the silicon process.

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