Nexperia

PRMB11

50 V, 100 mA PNP/PNP Resistor-Equipped double Transistors (RET)

PRMB11

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Product data sheet

14 August 2017

5 / 13

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current (emitter open)

VCB = -50 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

VCE = -30 V; IB = 0 A; Tamb = 25 °C

-

-

-100

nA

ICEO

collector-emitter cut-off

current (base open)

VCE = -30 V; IB = 0 A; Tj = 150 °C

-

-

-5

µA

IEBO

emitter-base cut-off

current (collector open)

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-

-400

µA

hFE

DC current gain

VCE = -5 V; IC = -5 mA; Tamb = 25 °C

30

-

-

VCEsat

collector-emitter

saturation voltage

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-

-

-150

mV

VI(off)

off-state input voltage

VCE = -5 V; IC = -100 µA; Tamb = 25 °C

-

-1.1

-0.8

V

VI(on)

on-state input voltage

VCE = -0.3 V; IC = -10 mA; Tamb = 25 °C

-2.5

-1.8

-

V

R1

bias resistor 1

[1]

7

10

13

kΩ

R2/R1

bias resistor ratio

Tamb = 25 °C

[1]

0.8

1

1.2

CC

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

3

pF

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

180

-

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

IC (mA)

-10-1

-102

-10

-1

006aac773

102

10

103

hFE

1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 3. DC current gain as a function of collector

current; typical values

VCE (V)

0

-5

-4

-2

-3

-1

aaa-017927

-0.04

-0.06

-0.02

-0.08

-0.1

IC

(A)

0

IB = -0.08 mA

-0.24 mA

-0.32 mA

-0.40 mA

-0.48 mA

-0.56 mA

-0.64 mA

-0.72 mA

-0.80 mA

-0.16 mA

Tamb = 25 °C

Fig. 4. Collector current as a function of collector-

emitter voltage; typical values