Nexperia

PRMB11

50 V, 100 mA PNP/PNP Resistor-Equipped double Transistors (RET)

PRMB11

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2017. All rights reserved

Product data sheet

14 August 2017

6 / 13

IC (mA)

-1

-102

-10

aaa-017926

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 5. Collector-emitter saturation voltage as a

function of collector current; typical values

006aac775

IC (mA)

-10-1

-102

-10

-1

-1

-10

VI(on)

(V)

-10-1

(1)

(2)

(3)

VCE = -0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 6. On-state input voltage as a function of collector

current; typical values

IC (mA)

-10-1

-10

-1

006aac776

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 7. Off-state input voltage as a function of

collector current; typical values

VCB (V)

0

-50

-40

-20

-30

-10

006aac777

2

4

6

Cc

(pF)

0

f = 1 MHz; Tamb = 25 °C

Fig. 8. Collector capacitance as a function of

collector-base voltage; typical values