LMP8640, LMP8640-Q1, LMP8640HV

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SNOSB28G – AUGUST 2010 – REVISED NOVEMBER 2014

7.5 Thermal Information

LMP8640

LMP8640HV

LMP8640-Q1

THERMAL METRIC(1)

UNIT

THIN SOT-23

6 PINS

RθJA

Junction-to-ambient thermal resistance (2)

165

RθJC(top)

Junction-to-case (top) thermal resistance

28

RθJB

Junction-to-board thermal resistance

24.6

°C/W

ψJT

Junction-to-top characterization parameter

0.3

ψJB

Junction-to-board characterization parameter

23.8

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2)

The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ(MAX), θJA, and the ambient temperature,

TA. The maximum allowable power dissipation PDMAX = (TJ(MAX) - TA)/ θJA or the number given in Absolute Maximum Ratings, whichever

is lower.

7.6 Electrical Characteristics 2.7 V

(1)

Unless otherwise specified, all limits ensured for at TA = 25°C, VS= V

+ – V-, V

SENSE= +IN-(-IN), V

+ = 2.7 V, V− = 0 V, −2 V <

VCM < 76 V, RL = 10 MΩ. LMP8640 limits also apply to the LMP8640-Q1.

PARAMETER

TEST CONDITIONS

MIN(2)

TYP(3)

MAX(2)

UNIT

VCM = 2.1 V

-900

900

VOS

Input Offset Voltage

µV

VCM = 2.1 V, Over Temperature

-1160

1160

TCVOS

Input Offset Voltage Drift(4) (5)

VCM = 2.1 V

2.6

µV/°C

VCM = 2.1 V, VSENSE = 0 V

12

20

IB

Input Bias Current (6)

µA

VCM = 2.1 V, Over Temperature, VSENSE = 0 V

27

eni

Input Voltage Noise (5)

f > 10 kHz

117

nV/

√Hz

Gain LMP8640-T LMP8640HV-T

20

Gain LMP8640-F LMP8640HV-F

50

V/V

Gain LMP8640-H LMP8640HV-H

100

Gain AV

VCM = 2.1 V

-0.25%

0.25%

Gain error

VCM = 2.1 V, Over Temperature

-0.51%

0.51%

Accuracy over temperature(5)

VCM = 2.1V, Over Temperature

26.2

ppm/°C

PSRR

Power Supply Rejection Ratio

VCM = 2.1 V, 2.7 V < V

+ < 12 V,

85

dB

LMP8640HV 2.1 V < VCM < 42 V

103

LMP8640 2.1 V < VCM< 42 V

CMRR

Common Mode Rejection Ratio

dB

LMP8640HV 2.1 V < VCM < 76 V

95

-2 V <VCM < 2 V,

60

(1)

Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under

conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the

device may be permanently degraded, either mechanically or electrically.

(2)

Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using

statistical quality control (SQC) method.

(3)

Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and

will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production

material.

(4)

Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature

change.

(5)

This parameter is ensured by design and/or characterization and is not tested in production.

(6)

Positive Bias Current corresponds to current flowing into the device. Spec does not include input signal dependent currents on the

positive input of approximately Vsense / 5K

Ω due to topology feedback action.

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