5

TLV733P

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SBVS235C – OCTOBER 2014 – REVISED JULY 2019

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Copyright © 2014–2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted); all voltages are with respect to GND

(1)

MIN

MAX

UNIT

Voltage

VIN

–0.3

6.0

V

VEN

–0.3

VIN + 0.3

VOUT

–0.3

3.6

Current

IOUT

Internally limited

A

Output short-circuit duration

Indefinite

Temperature

Operating junction, TJ

–40

150

°C

Storage, Tstg

–65

160

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Input range, VIN

1.4

5.5

V

Output range, VOUT

1.0

3.3

V

Output current, IOUT

0

300

mA

Enable range, VEN

0

VIN

V

Junction temperature, TJ

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TLV733P

UNIT

DQN (X2SON)

DBV (SOT-23)

4 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

218.6

228.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

164.8

151.5

°C/W

RθJB

Junction-to-board thermal resistance

164.9

55.8

°C/W

ψJT

Junction-to-top characterization parameter

5.6

31.4

°C/W

ψJB

Junction-to-board characterization parameter

163.9

54.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

131.4

N/A

°C/W