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AMC1336DWVR Datasheet(PDF) 8 Page - Texas Instruments

Part # AMC1336DWVR
Description  AMC1336 Small, High-Precision, Reinforced Isolated Delta-Sigma Modulator for Voltage Sensing Applications
PDF  41 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

AMC1336DWVR Datasheet(HTML) 8 Page - Texas Instruments

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AMC1336
SBAS951B – AUGUST 2019 – REVISED APRIL 2020
www.ti.com
Product Folder Links: AMC1336
Submit Documentation Feedback
Copyright © 2019–2020, Texas Instruments Incorporated
Electrical Characteristics (continued)
minimum and maximum specifications apply from TA = –40°C to +125°C, AVDD = 3.0 V to 5.5 V, DVDD = 2.7 V to 5.5 V,
AINP = –1 V to +1 V, and AINN = AGND = 0 V; typical specifications are at TA = 25°C, AVDD = 5 V, DVDD = 3.3 V, and
fCLKIN = 20 MHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(1)
Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(2)
Offset error drift is calculated using the box method, as described by the following equation:
TCEO = (valueMAX - valueMIN) / TempRange
(3)
The typical value includes one sigma statistical variation.
(4)
Gain error drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = ((valueMAX - valueMIN) / (value x TempRange)) X 10
6
DC ACCURACY
Resolution
Decimation filter output set to 16 bits
16
Bit
INL
Integral nonlinearity(1)
Resolution: 16 bits
–4
±1.6
4
LSB
EO
Offset error
Initial, at TA = 25°C, AINP = AINN = AGND
–0.5
±0.03
0.5
mV
TCEO
Offset error drift(2)
–4
±0.6
4
µV/°C
EG
Gain error(3)
Initial, at TA = 25°C,
VAINP = 1 V or VAINN = –1 V, AINN = AGND
–0.25
±0.02
0.25
%
TCEG
Gain error drift(4)
–40
±20
40
ppm/°C
CMRR
Common-mode rejection ratio
AINP = AINN, fIN = 0 Hz, VCM min ≤ VCM ≤ VCM max
–104
dB
AINP = AINN, fIN = 10 kHz, –0.5 V ≤ VIN ≤ 0.5 V
–96
PSRR
Power-supply rejection ratio
PSRR vs AVDD, at DC
–83
dB
PSRR vs AVDD, 100-mV and 10-kHz ripple
–83
AC ACCURACY
SNR
Signal-to-noise ratio
VIN = 2 VPP, fIN = 1 kHz
82
87
dB
SINAD
Signal-to-noise + distortion
VIN = 2 VPP, fIN = 1 kHz
79
85
dB
THD
Total harmonic distortion
VIN = 2 VPP, fIN = 1 kHz
–91
–80
dB
SFDR
Spurious-free dynamic range
VIN = 2 VPP, fIN = 1 kHz
80
92
dB
DIGITAL INPUT (CMOS Logic With Schmitt-Trigger)
IIN
Input current
DGND
≤ VIN ≤ DVDD
7
µA
CIN
Input capacitance
4
pF
VIH
High-level input voltage
0.7 x DVDD
DVDD + 0.3
V
VIL
Low-level input voltage
–0.3
0.3 x DVDD
V
DIGITAL OUTPUT (CMOS)
CLOAD
Output load capacitance
fCLKIN = 21 MHz
15
30
pF
VOH
High-level output voltage
IOH = –20 µA
DVDD – 0.1
V
IOH = –4 mA
DVDD – 0.4
VOL
Low-level output voltage
IOL = 20 µA
0.1
V
IOL = 4 mA
0.4
POWER SUPPLY
AVDDPOR
AVDD power-on reset threshold voltage
AVDD falling
2.4
2.6
2.8
V
IAVDD
High-side supply current
3 V
≤ AVDD ≤ 3.6 V
6.8
9
mA
4.5 V
≤ AVDD ≤ 5.5 V
7.8
10.5
IDVDD
Controller-side supply current
2.7 V
≤ DVDD ≤ 3.6 V, CLOAD = 15 pF
3.4
5
mA
4.5 V
≤ DVDD ≤ 5.5 V, CLOAD = 15 pF
3.7
6



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