4 Specifications

4.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVS1S2

Source-to-source voltage

VGS = 0 V, IS = 250 μA

12

V

IS1S2

Source-to-source leakage current

VGS = 0 V, VS1S2 = 9.6 V

1.0

μA

IGSS

Gate-to-source leakage current

VS1S2 = 0 V, VGS = 10 V

10

µA

VGS(th)

Gate-to-source threshold voltage

VS1S2 = VGS, IS = 250 μA

0.7

1.0

1.4

V

RS1S2(on) Source-to-source on resistance

VGS = 2.5 V, IS = 5 A

12.0

17.5

23.0

mΩ

VGS = 3.8 V, IS = 5 A

8.8

10.9

13.0

mΩ

VGS = 4.5 V, IS = 5 A

7.9

9.9

11.9

mΩ

gfs

Transconductance

VS1S2 = 1.2 V, IS = 5 A

36

S

DYNAMIC CHARACTERISTICS(1)

Ciss

Input capacitance

VGS = 0 V, VS1S2 = 6 V, ƒ = 1 MHz

902

1170

pF

Coss

Output capacitance

187

243

pF

Crss

Reverse transfer capacitance

111

144

pF

Qg

Gate charge total (4.5 V)

VS1S2 = 6 V, IS = 5 A

8.4

10.9

nC

Qgd

Gate charge gate-to-drain

1.9

nC

Qgs

Gate charge gate-to-source

2.2

nC

Qg(th)

Gate charge at Vth

0.6

nC

Qoss

Output charge

VS1S2 = 6 V, VGS = 0 V

2.9

nC

td(on)

Turnon delay time

VS1S2 = 6 V, VGS = 4.5 V,

IS1S2 = 5 A, RG = 0 Ω

205

ns

tr

Rise time

353

ns

td(off)

Turnoff delay time

711

ns

tf

Fall time

589

ns

DIODE CHARACTERISTICS

VF(S-S)

Source-to-source diode forward voltage

ISS = 5 A, VG1S1 = 0 V, VG2S2 = 4.5 V

0.79

1.0

V

(1)

Dynamic characteristics values specified are per single FET.

4.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

150

°C/W

Junction-to-ambient thermal resistance(2)

55

(1)

Device mounted on FR4 material with minimum Cu mounting area.

(2)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

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CSD83325L

SLPS494C – NOVEMBER 2014 – REVISED NOVEMBER 2023

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