CSD83325L datasheet(4/14 Pages) TI2

Part #	CSD83325L

Description	CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

PDF	14 Pages

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Manufacturer	TI2 [Texas Instruments]

Direct Link	https://www.ti.com

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4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

Figure 4-1. Transient Thermal Impedance

VS1S2 - Source-to-Source Voltage (V)

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

D002

VGS = 2.5 V

VGS = 3.8 V

VGS = 4.5 V

Figure 4-2. Saturation Characteristics

VGS - Gate-to-Source Voltage (V)

0.5

1.5

2.5

D003

TC = 125°C

TC = 25°C

TC = -55°C

VS1S2 = 5 V

Figure 4-3. Transfer Characteristics

Qg - Gate Charge (nC)

D004

IS = 5 A VS1S2 = 6 V

Figure 4-4. Gate Charge

VS1S2 - Source-to-Source Voltage (V)

100

1000

10000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

Figure 4-5. Capacitance

CSD83325L

SLPS494C – NOVEMBER 2014 – REVISED NOVEMBER 2023

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