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STM32U073RCU6 Datasheet(PDF) 80 Page - STMicroelectronics

Part # STM32U073RCU6
Description  Ultra-low-power Arm® Cortex®-M0 32-bit MCU, up to 256-Kbyte flash memory, 40-Kbyte SRAM, USB, LCD
PDF  146 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U073RCU6 Datasheet(HTML) 80 Page - STMicroelectronics

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Table 58. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND
Endurance
TA = -40 to +105 °C
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
30
Years
1 kcycle(2) at TA = 105 °C
15
1 kcycle(2) at TA = 125 °C
7
10 kcycles(2) at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles(2) at TA = 105 °C
10
1. Evaluated by characterization, not tested in production.
2. Cycling performed over the whole temperature range.
6.3.11
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed
by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs:
•
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional
disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF
capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 59. EMS characteristics. They are based on the EMS levels and classes
defined in application note AN1709.
Table 59. EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O pin to induce a functional
disturbance
VDD = 3.3 V, TA = +25 °C,
fHCLK = 54 MHz, LPQF80
conforming to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be applied through 100 pF on VDD
and VSS pins to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C,
fHCLK = 54 MHz, LPQF80
conforming to IEC 61000-4-4
5A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical application environment
and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user
application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation
with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
•
Corrupted program counter
•
Unexpected reset
•
Critical Data corruption (control registers...)
STM32U073x8/B/C
Electrical characteristics
DS14548 - Rev 2
page 80/146



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