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STB11NM80 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB11NM80
Description  N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB11NM80 Datasheet(HTML) 5 Page - STMicroelectronics

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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical characteristics
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Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
11
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
44
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=11 A, VGS=0
0.86
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD=50 V, Tj=25 °C
612
7.22
23.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD=50 V, Tj=150 °C
970
11.25
23.2
ns
µC
A



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