October 2007

Rev 1

1/6

6

STTH12S06

Turbo 2 ultrafast high voltage rectifier

Features and benefits

transistor

Description

ST's STTH12S06 is a state of the art Ultrafast

recovery diode. By the use of 600 V Pt doping

Planar technology, this diode will outperform the

power factor correction circuits operating in

hardswitching conditions. The extremely low

reverse recovery current of the STTH12S06,

reduces significantly the switching power losses

of the MOSFET, and thus increases the

efficiency of the application. This allows designers

to reduce the size of their heatsinks.

This device is also intended for applications in

power supplies and power conversions systems,

and other power switching applications.

Table 1.

Main product characteristics

12 A

600 V

6 A

175 °C

1.5 V

14 ns

TO-220FPAC

STTH12S06FP

A

K

Table 2.

Absolute ratings (limiting values at 125 °C, unless otherwise stated)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

600

V

Average forward current

12

A

Surge non repetitive forward current

100

A

Storage temperature range

- 65 + 175

°C

Maximum operating junction temperature

175

°C

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