1

2

3

4

8

7

6

5

VDD2

VOUTP

VOUTN

GND2

VDD1

VINP

VINN

GND1

3

AMC1100

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SBAS562B – APRIL 2012 – REVISED DECEMBER 2019

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5 Pin Configuration and Functions

DUB and DWV Packages

SOP-8 and SOIC-8

(Top View)

Pin Descriptions

PIN

FUNCTION

DESCRIPTION

NAME

NO.

GND1

4

Power

High-side analog ground

GND2

5

Power

Low-side analog ground

VDD1

1

Power

High-side power supply

VDD2

8

Power

Low-side power supply

VINN

3

Analog input

Inverting analog input

VINP

2

Analog input

Noninverting analog input

VOUTN

6

Analog output

Inverting analog output

VOUTP

7

Analog output

Noninverting analog output

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

see

(1)

MIN

MAX

UNIT

Supply voltage, VDD1 to GND1 or VDD2 to GND2

–0.5

6

V

Analog input voltage at VINP, VINN

GND1 – 0.5

VDD1 + 0.5

V

Input current to any pin except supply pins

±10

mA

Maximum junction temperature, TJ Max

150

°C

Storage temperature range, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

Charged device model (CDM), per JEDEC specification JESD22-

C101(2)

±1000