THERMAL METRIC(1)

INA791x

UNIT

DEK (VQFN)

15 PINS

ΨJB

Junction-to-board characterization parameter(2)

8.4

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

(2)

Thermal metrics are relative to the internal die and are conservative relative to the heating that occur from the package leadframe

shunt. For more details on heating, see the Safe Operating Area section.

5.5 Electrical Characteristics

at TA = 25°C, VS = 5V, ISENSE = IS+ = 0A, VCM = VIN– = 48V, VFB = VOUT (Adjustable Gain = 1), and VREF = VS / 2 (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VCM

Common-mode input range

VIN+ = –4V to 110V, ISENSE = 0A,

TA = –40°C to +125°C

–4

110

V

CMRR

Common-mode rejection ratio

VIN+ = –4V to 110V, ISENSE = 0A,

TA = –40°C to +125°C, INA791A

±25

±79

µA/V

VIN+ = –4V to 110V, ISENSE = 0A,

TA = –40°C to +125°C, INA791B

±790

±1250

CMRR

Common-mode rejection ratio

f = 50kHz

±56

mA/V

Ios

Input referred offset current error

ISENSE = 0A, INA791A

±5

±40

mA

ISENSE = 0A, INA791A,

TA = –40°C to +125°C,

±20

±70

ISENSE = 0A, INA791B

±62.5

±210

ISENSE = 0A, INA791B,

TA = –40°C to +125°C,

±250

PSRR

Power supply rejection ratio

VS = 2.7V to 5.5V, VREF = 1V,

ISENSE = 0A, INA791A

±1

±5.5

mA/V

VS = 2.7V to 5.5V, VREF = 1V,

ISENSE = 0A, INA791B

±2.5

±25

IB

Total input bias current

IB++ IB-, ISENSE = 0A

45

66

90

µA

IFB

Feed-back current

ISENSE = 0A

±2

nA

ISENSE = 0A, TA = –40°C to +125°C

±6

INTEGRATED SHUNT RESISTOR

RSHUNT

Internal Kelvin shunt resistance

IN+ to IN-, TA = 25°C

400

µΩ

Pin to pin package resistance

IS+ to IS-, TA = 25°C

425

560

650

µΩ

Pin to pin package inductance

IS+ to IS-, TA = 25°C

2

nH

ISENSE

Maximum Continuous Current

TA = –40°C to +125°C

±50

A

Short time overload change

ISENSE = 120A for 5 seconds

± 0.05

%

Change due to temperature cycle

–65°C to 150°C, 500 cycles

± 0.1

%

Shunt resistance change to solder

heat

260°C solder, 10 seconds

± 0.1

%

High temperature exposure change

1000 hours, TA = 150°C

± 0.015

%

OUTPUT

G

Gain

INA791A, INA791B

20

mV/A

www.ti.com

INA791A, INA791B

SBOSAD1A – MAY 2024 – REVISED JULY 2025

Copyright © 2025 Texas Instruments Incorporated

Submit Document Feedback

5

Product Folder Links: INA791A INA791B