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VNP10N06 Datasheet(PDF) 3 Page - STMicroelectronics

Part # VNP10N06
Description  "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNP10N06 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (
∗∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 16 V
Id = 1 A
Vgen = 7 V
Rgen = 10
Ω
(see figure 3)
1100
550
200
100
1600
900
400
200
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 16 V
Id = 1 A
Vgen = 7 V
Rgen = 1000
Ω
(see figure 3)
1.2
1
1.6
1.2
1.8
1.5
2.3
1.8
µs
µs
µs
µs
(di/dt)on
Turn-on Current Slope
VDD = 16 V
ID = 1 A
Vin = 7 V
Rgen = 10
Ω
1.5
A/
µs
Qi
Total Input Charge
VDD = 12 V
ID = 1 A
Vin = 7 V
13
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD (
∗)
Forward On Voltage
ISD = 1 A
Vin = VIL
0.8
1.6
V
trr (
∗∗)
Qrr (
∗∗)
IRRM (
∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 1 A
di/dt = 100 A/
µs
VDD = 30 V
Tj = 25
oC
(see test circuit, figure 5)
125
0.22
3.5
ns
µC
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ilim
Drain Current Limit
Vin = 7 V
VDS = 13 V
6
10
15
A
tdlim (
∗∗) Step Response
Current Limit
Vin = 7 V
VDS step from 0 to 13 V
12
20
µs
Tjsh (
∗∗) Overtemperature
Shutdown
150
oC
Tjrs (
∗∗)
Overtemperature Reset
135
oC
Eas (
∗∗)
Single Pulse
Avalanche Energy
starting Tj = 25
oC
VDD = 24 V
Vin = 7 V
Rgen = 1 K
Ω L = 10 mH
250
mJ
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
∗∗) Parameters guaranteed by design/characterization
VNP10N06
3/11



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