STGW50H65DFB2-4 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STGW50H65DFB2-4

Description	Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

GADG041220191034PDT

250

200

150

100

125

175

PTOT

(W)

≥

≤

TC (°C)

Figure 2. Collector current vs case temperature

GADG041220191035CCT

125

175

(A)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

GADG041220191035OC25

125

100

(A)

VCE (V)

VGE = 9 V

VGE = 7 V

VGE = 11 V

VGE = 13 V

VGE = 15 V

Figure 4. Output characteristics (TJ = 175 °C)

GADG041220191036OC175

125

100

(A)

VCE (V)

VGE = 9 V

VGE = 7 V

VGE = 11 V

VGE = 13 V

VGE = 15 V

Figure 5. VCE(sat) vs junction temperature

GADG041220191036VCET

2.6

2.3

2.0

1.7

1.4

1.1

0.8

-50

100

150

VCE(SAT)

(V)

TJ (°C)

IC = 25 A

IC = 50 A

IC = 100 A

VGE = 15 V

Figure 6. VCE(sat) vs collector current

GADG041220191037VCEC

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

100

125

VCE(SAT)

(V)

IC (A)

VGE = 15 V

TJ = 25 °C

TJ = -40 °C

TJ = 175 °C

STGW50H65DFB2-4

Electrical characteristics (curves)

DS13420 - Rev 1

page 5/15

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