STGW50H65DFB2-4 datasheet(6/15 Pages) STMICROELECTRONICS

Part #	STGW50H65DFB2-4

Description	Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

6 / 15 page

Figure 7. Collector current vs switching frequency

GADG051220191302CCS

10 0

10 1

10 2

(A)

f (kHz)

Rectangular current shape

(duty cycle = 0.5, VCC = 400 V,

RG = 4.7 Ω, VGE = 0/15 V , Tj = 175 °C

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

IGBT061220191241FSOA

10 2

10 1

10 0

10 1

10 2

(A)

VCE (V)

tp = 1 µs

tp = 10 µs

tp = 100 µs

tp = 1 ms

Single pulse, TC = 25 °C,

TJ ≤ 175 °C, VGE = 15 V

Figure 9. Transfer characteristics

GADG041220191038TCH

125

100

(A)

VGE (V)

Tj = 175 °C

Tj = 25 °C

VCE = 6 V

Figure 10. Diode VF vs forward current

IGBT230216EWF6GDVF

2.3

2.0

1.7

1.4

1.1

0.8

(V)

IF (A)

TJ = -40 °C

TJ = 25 °C

TJ = 175 °C

Figure 11. Normalized VGE(th) vs junction temperature

GADG300120191024NVGE

1.1

1.0

0.9

0.8

0.7

0.6

-50

100

150

VGE(th)

(norm.)

TJ (°C)

VCE = VGE

IC = 1 mA

Figure 12. Normalized V(BR)CES vs junction temperature

GADG300120191024NVBR

1.08

1.04

1.00

0.96

0.92

-50

100

150

V(BR)CES

(norm.)

TJ (°C)

IC = 1 mA

STGW50H65DFB2-4

Electrical characteristics (curves)

DS13420 - Rev 1

page 6/15

STGW50H65DFB2-4 Datasheet(PDF) 6 Page - STMicroelectronics

STGW50H65DFB2-4 Datasheet(HTML) 6 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL