30

40

50

60

70

±75

±50

±25

0

25

50

75

100

125

150

Temperature (

ƒC)

C001

I

SC, Source

I

SC, Sink

0

20

40

60

80

100

10M

100M

1G

10G

Frequency (Hz)

C036

Time (200 ns/div)

CL = 10 pF

CL = 100 pF

C030

CL

RL

±

+

VIN = 100 mVpp

+ 2.75 V

± 2.75 V

Device

+

±

C

L = 10 pF

C

L = 100 pF

Time (100 ns/div)

C031

CL

RL

±

+

VIN = 1 Vpp

+ 2.75 V

± 2.75 V

Device

+

±

V

OUT

V

IN

0

10

20

30

40

50

0p

100p

200p

300p

Capacitive Load (F)

C025

±

+

RI = 1 kohm

VIN = 100 mVpp

+ 2.75 V

± 2.75 V

CL

Device

+

±

RF = 1 kohm

Time (100 s/div)

C027

V

OUT

V

IN

6.1 VPP

Sine Wave

±

+

VOUT

+ 2.75 V

± 2.75 V

Device

+

±

12

TLV316-Q1, TLV2316-Q1, TLV4316-Q1

SBOS845B – NOVEMBER 2016 – REVISED AUGUST 2017

www.ti.com

Product Folder Links: TLV316-Q1 TLV2316-Q1 TLV4316-Q1

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Copyright © 2016–2017, Texas Instruments Incorporated

Typical Characteristics (continued)

at TA = 25°C, VS = 5.5 V, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, (unless otherwise noted)

V+ = 2.75 V, V– = –2.75 V, G = –1 V/V

Figure 7. Small-Signal Overshoot vs Load Capacitance

V+ = 2.75 V, V– = –2.75 V

Figure 8. No Phase Reversal

V+ = 2.75 V, V– = –2.75 V, G = 1 V/V

Figure 9. Small-Signal Step Response

V+ = 2.75 V, V– = –2.75 V, CL = 100 pF, G = 1 V/V

Figure 10. Large-Signal Step Response

Figure 11. Short-Circuit Current vs Temperature

PRF = –10 dBm

Figure 12. Electromagnetic Interference Rejection Ratio

Referred to Noninverting Input vs Frequency