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V1.0

24/08/20

Silicon Epitaxial Planar Diode

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Features

• High Voltage Switching Diodes

Absolute Maximum Ratings (Ta=25°C unless specified otherwise)

Description

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

250

V

Reverse Voltage (Continuous)

VR

200

V

Continuous Forward Current

IF

250

mA

Repetitive Peak Forward Current

IFRM

625

mA

Non Repetitive Peak Surge Current

at t = 1s

at t = 100 μs

at t = 1 μs

IFSM

1

3

9

A

A

A

Total Power Dissipation

PTOT

500

mW

Junction Temperature

TJ

175

°C

Storage Junction Temperature Range

TJ, TSTG

-65 to +175

°C

Electrical Characteristics (Ta=25°C unless specified otherwise)

Description

Symbol

Test Condition

Value

Unit

Forward Voltage

VF

IF=100mA

<1

V

IF=200mA

<1.25

V

Reverse Current

IR

VR=VR (Continuous)

<100

nA

VR=VR (Continuous), TA=150°C

<100

μA

Breakdown Voltage

VBR

IR=100 A

>250

V

Diode Capacitance

Cd

VR = 0V, f = 1MHz

< 5

pF

Reverse Recovery Time

trr

IF=IR=30mA, Irr = 3mA, RL=100Ω

< 50

ns