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STM32H533CE Datasheet(PDF) 117 Page - STMicroelectronics |
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STM32H533CE Datasheet(HTML) 117 Page - STMicroelectronics |
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117 / 231 page ![]() DS14539 Rev 1 117/231 STM32H533xx Electrical characteristics 200 Wake-up time from low-power modes The times given in Table 38 are measured starting from the wake-up event trigger up to the first instruction executed by the CPU: • for Stop or Sleep modes: the wake-up event is WFE. • WKUP (PA1) pin is used to wake-up from Standby, Stop and Sleep modes. All timings are derived from tests performed under ambient temperature and VDD = 3.0 V. APB3 LPTIM1 0.93 0.82 0.73 0.65 uA/MHz LPUART1 0.86 0.77 0.68 0.61 RTCAPB 2.11 1.85 1.69 1.51 SBS 0.45 0.38 0.35 0.32 VREFBUF 0.09 0.09 0.05 0.04 I3C2 2.55 2.25 2.03 1.84 APB3 0.52 0.46 0.42 0.39 Table 37. Peripheral current consumption in Sleep mode (continued) Bus Peripheral IDD (typ) Unit VOS0 VOS1 VOS2 VOS3 Table 38. Low-power mode wake-up timings(1) Symbol Parameter Conditions Typ Max Unit tWUSLEEP Wake-up time from Sleep mode Instruction cache enabled 15 16 CPU clock cycles Instruction cache disabled 15 16 tWUSTOP Wake-up time from Stop mode SVOS3, HSI 64 MHz, flash memory in normal mode 4.0 4.8 µs SVOS3, HSI 64 MHz, flash memory in low-power mode 7.9 11.5 SVOS4, HSI 64 MHz, flash memory in normal mode 13.8 16.0 SVOS4, HSI 64 MHz, flash memory in low-power mode 17.7 21.9 SVOS5, HSI 64 MHz, flash memory in low-power mode 31.4 36.8 SVOS3, CSI 4 MHz, flash memory in normal mode 25.5 31.0 SVOS3, CSI 4 MHz, flash memory in low power mode 27.7 34.2 SVOS4, CSI 4 MHz, flash memory in normal mode 35.3 40.8 SVOS4, CSI 4 MHz, flash memory in low-power mode 37.5 44.0 SVOS5, CSI 4 MHz, flash memory in low-power mode 51.2 58.9 tWUSTBY Wake-up time from Standby mode VCAP capacitors discharged 506.0 653.6 1. Evaluated by characterization - Not tested in production. |
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