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C2M0080170P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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C2M0080170P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF8119 eq C2M0080170P SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 100uA 1700 -- -- V IGSS Gate Source Leakage Current VGS= -5/+20V, VDS= 0V -- -- ±250 nA IDSS Zero Gate Voltage Drain Current VDS= 1700V, VGS= 0V -- -- 100 uA VGS(th) Gate Threshold Voltage VDS= VGS, ID= 10mA 2.0 -- 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 20V, ID= 28A -- -- 125 mΩ VSD Diode Forward Voltage ISD= 10A, VGS= -5V -- 4.2 -- V PACKAGE OUTLINE: TO-247-4 |
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