3

CSD22206W

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SLPS689 – MAY 2017

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Copyright © 2017, Texas Instruments Incorporated

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = –250 μA

–8

V

BVGSS

Gate-to-source voltage

VDS = 0 V, IG = –250 μA

–6

V

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = –6.4 V

–1

μA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = –6 V

–100

nA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = –250 μA

–0.4

–0.7

–1.05

V

RDS(on)

Drain-to-source on resistance

VGS = –2.5 V, IDS = –2 A

6.8

9.1

m

Ω

VGS = –4.5 V, IDS = –2 A

4.7

5.7

gfs

Transconductance

VDS = –0.8 V, IDS = –2 A

20

S

DYNAMIC CHARACTERISTICS

CISS

Input capacitance

VGS = 0 V, VDS = –4 V,

ƒ = 1 MHz

1750

2275

pF

COSS

Output capacitance

960

1250

pF

CRSS

Reverse transfer capacitance

340

440

pF

RG

Series gate resistance

30

Ω

Qg

Gate charge total (–4.5 V)

VDS = –4 V,

ID = –2 A

11.2

14.6

nC

Qgd

Gate charge gate-to-drain

1.8

nC

Qgs

Gate charge gate-to-source

2.1

nC

Qg(th)

Gate charge at Vth

1.3

nC

QOSS

Output charge

VDS = –4 V, VGS = 0 V

7.2

nC

td(on)

Turnon delay time

VDS = –4 V, VGS = –4.5 V,

IDS = –2 A, RG = 0 Ω

37

ns

tr

Rise time

17

ns

td(off)

Turnoff delay time

118

ns

tf

Fall time

45

ns

DIODE CHARACTERISTICS

VSD

Diode forward voltage

IDS = –2 A, VGS = 0 V

–0.69

–1.0

Qrr

Reverse recovery charge

VDS= –4 V, IF = –1 A,

di/dt = 200 A/μs

24

nC

trr

Reverse recovery time

59

ns

(1)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

75

°C/W

Junction-to-ambient thermal resistance(2)

230