R6502END3

Nch 650V 3.05ohm(typ.) Power MOSFET

Datasheet

l

lOutline

VDSS

650V

TO-252

RDS(on)(Max.)

4.0Ω

ID

±1.7A

PD

26W

l

lFeatures

l

lInner circuit

1) Low on-resistance

2) Fast switching

3) Drive circuits can be simple

4) Parallel use is easy

5) Pb-free lead plating ; RoHS compliant

l

lApplication

l

lPackaging specifications

Switching

Packing

Embossed Tape

Packing code

TL1

Marking

R6502END3

Quantity (pcs)

2500

l

lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain - Source voltage

VDSS

650

V

Continuous drain current (Tc = 25°C)

ID*1

±1.7

A

Pulsed drain current

IDP*2

±4

A

Gate - Source voltage

static

VGSS

±20

V

AC(f>1Hz)

±30

V

Avalanche current, single pulse

IAS*3

0.3

A

Avalanche energy, single pulse

EAS*3

7

mJ

Power dissipation (Tc = 25°C)

PD

26

W

Junction temperature

Tj

150

℃

Operating junction and storage temperature range

Tstg

-55 to +150

℃

www.rohm.com

© 2022 ROHM Co., Ltd. All rights reserved.

1/11

20231221 - Rev.001