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RF2304 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RF2304
Description  GENERAL PURPOSE LOW-NOISE AMPLIFIER
PDF  8 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2304 Datasheet(HTML) 3 Page - RF Micro Devices

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RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Application Schematic
Pin
Function
Description
Interface Schematic
1GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2GND
Same as pin 1.
3RF IN
DC coupled RF input. A broadband impedance match is produced by inter-
nal shunt resistive feedback. The DC level is approximately 200mV. If a DC
path exists in the connected circuitry, an external DC-blocking capacitor is
required to properly maintain the DC operating point.
4GND
Same as pin 1.
5GND
Same as pin 1.
6RF OUT
RF output. A broadband impedance match is produced by internal shunt
resistive feedback. The DC connection to the power supply is provided
through an external chip inductor having greater than 150
Ω reactance at
the operating frequency. An external DC-blocking capacitor is required if
the following circuitry is not DC-blocked.
7
VDD2
Bias control connection. This pin is normally connected to the power sup-
ply, but can be used to switch the amplifier on and off by switching
between power supply voltage and ground. This pin sinks approximately
600
μA when connected to VDD, and sources less than 10μA when
grounded.
8NC
No connection.
RF IN
RF OUT
VDD
2
1
4
3
7
8
5
6
100 pF
RF IN
L1
RF Choke
100 pF
1 nF
VDD



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