2

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April 28, 2014

IRLML6401PbF

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

––– –––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)



––– –––

p-n junction diode.

VSD

Diode Forward Voltage

––– ––– -1.2

V

TJ = 25°C, IS = -1.3A, VGS = 0V

‚

trr

Reverse Recovery Time

–––

22

33

ns

TJ = 25°C, IF = -1.3A

Qrr

Reverse RecoveryCharge

–––

8.0

12

nC

di/dt = -100A/μs

‚

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

‚ Pulse width ≤ 300μs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

-1.3

-34

A

S

D

G

ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,

steady state.

„ Starting TJ = 25°C, L = 3.5mH

RG = 25Ω, IAS = -4.3A.

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-12

–––

–––

V

VGS = 0V, ID = -250μA

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

––– -0.007 –––

V/°C Reference to 25°C, ID = -1mA

––– ––– 0.050

VGS = -4.5V, ID = -4.3A

‚

RDS(on)

Static Drain-to-Source On-Resistance

––– ––– 0.085

VGS = -2.5V, ID = -2.5A

‚

––– ––– 0.125

VGS = -1.8V, ID = -2.0A

‚

VGS(th)

Gate Threshold Voltage

-0.40 -0.55 -0.95

V

VDS = VGS, ID = -250μA

gfs

Forward Transconductance

8.6

–––

–––

S

VDS = -10V, ID = -4.3A

––– ––– -1.0

VDS = -12V, VGS = 0V

––– –––

-25

VDS = -9.6V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage

––– ––– -100

VGS = -8.0V

Gate-to-Source Reverse Leakage

––– –––

100

VGS = 8.0V

Qg

Total Gate Charge

–––

10

15

ID = -4.3A

Qgs

Gate-to-Source Charge

–––

1.4

2.1

nC

VDS = -10V

Qgd

Gate-to-Drain ("Miller") Charge

–––

2.6

3.9

VGS = -5.0V

‚

td(on)

Turn-On Delay Time

–––

11

–––

VDD = -6.0V

tr

Rise Time

–––

32

–––

ID = -1.0A

td(off)

Turn-Off Delay Time

––– 250

–––

RD = 6.0

Ω

tf

Fall Time

––– 210

–––

RG = 89

Ω ‚

Ciss

Input Capacitance

––– 830

–––

VGS = 0V

Coss

Output Capacitance

––– 180

–––

pF

VDS = -10V

Crss

Reverse Transfer Capacitance

––– 125

–––

ƒ = 1.0MHz

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

μA

Ω

IDSS

Drain-to-Source Leakage Current

nA

ns