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PDC8976AX Datasheet(PDF) 2 Page - Potens Semiconductor Corp. |
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PDC8976AX Datasheet(HTML) 2 Page - Potens Semiconductor Corp. |
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2 / 5 page ![]() Potens semiconductor corp. Ver.1.01 2 PDC8976AX 80V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=64V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS(+) Gate-Source Leakage Current VGS=+20V, VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 5.9 7.2 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.5 3.2 4 V gfs Forward Transconductance VDS=10V , ID=3A --- 10 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=40V , VGS=10V , ID=10A --- 40.3 60 nC Qgs Gate-Source Charge3 , 4 --- 9.4 15 Qgd Gate-Drain Charge3 , 4 --- 16 25 Td(on) Turn-On Delay Time3 , 4 VDD=40V , VGS=10V , RG=6 ID=1A --- 14.6 30 ns Tr Rise Time3 , 4 --- 21.5 42 Td(off) Turn-Off Delay Time3 , 4 --- 52 108 Tf Fall Time3 , 4 --- 83.5 167 Ciss Input Capacitance VDS=40V , VGS=0V , F=1MHz --- 2490 4980 pF Coss Output Capacitance --- 823 1640 Crss Reverse Transfer Capacitance --- 44 80 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 80 A ISM Pulsed Source Current --- --- 160 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VGS=10V, IS=10A , di/dt= 100A/μs , TJ=25℃ --- 50 --- ns Qrr Reverse Recovery Charge --- 70 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=40V,VGS=10V,L=0.1mH,IAS=64A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (T J=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings |
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