© 2007 California Micro Devices Corp. All rights reserved.

06/13/07

490 N. McCarthy Blvd., Milpitas, CA 95035-5112

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Tel: 408.263.3214

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Fax: 408.263.7846

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www.cmd.com

3

CM1622

Preliminary

Specifications

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: These parameters are guaranteed by design and characterization.

Note 4: Attenuation / RF curves characterized by a network analyzer using microprobes.

Note 5: These parameters are NOT guaranteed by design, characterization and production.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RATING

UNITS

Storage Temperature Range

–65 to +150

°C

DC Power per Resistor

100

mW

DC Package Power Rating

500

mW

STANDARD OPERATING CONDITIONS

PARAMETER

RATING

UNITS

Operating Temperature Range

–40 to +85

°C

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

RResistance

85

100

115

Ω

Total Channel Capacitance

At 2.5VDC Reverse Bias, 1MHz,

30mVAC

20

25

30

pF

C

Capacitance C

At 2.5VDC Reverse Bias, 1MHz,

30mVAC

12.5

pF

Standoff Voltage

V

Diode Leakage Current (reverse bias)

0.01

0.2

μA

Signal Clamp Voltage

6.0

7.0

8.0

V

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-883,

Method 3015

b) Contact Discharge per IEC 61000-4-

2 Level 4

See notes 2 and 3.

±30

±15

kV

kV

Dynamic Resistance

Positive

Negative

2.3

0.9

Ω

Ω

f

C

Cut-off Frequency

Channel R = 100

Ω,

Channel C = 25pF

115

MHz

Absolute Attenuation @ 1GHz from 0dB

Level

DC Bias = 0V; See notes 1, 4, 5.

-35

dB

6GHz

Absolute Attenuation @ 800MHz to

6GHz from 0dB Level

DC Bias = 0V; See notes 1, 4, 5.

30

dB