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STGD18N40LZ Datasheet(PDF) 1 Page - STMicroelectronics |
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STGD18N40LZ Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page  March 2008 Rev 2 1/18 18 STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor Application ■ Pencil coil electronic ignition driver Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram 3 2 1 1 3 IPAK DPAK 1 2 3 1 3 I²PAK D²PAK Table 1. Device summary Order codes Marking Package Packaging STGD18N40LZT4 GD18N40LZ DPAK Tape and reel STGD18N40LZ-1 GD18N40LZ IPAK Tube STGB18N40LZT4 GB18N40LZ D²PAK Tape and reel STGB18N40LZ-1 GB18N40LZ I²PAK Tube www.st.com |
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