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STGD18N40LZ Datasheet(PDF) 5 Page - STMicroelectronics |
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STGD18N40LZ Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 18 page  STGD18N40LZ - STGB18N40LZ Electrical characteristics 5/18 Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 490 pF Coes Output capacitance 90 pF Cres Reverse transfer capacitance 6.5 pF Qg Gate charge VCE = 280 V, IC = 10 A, VGE = 5 V 23 nC Table 6. Switching on/off Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Resistive load Turn-on delay time Rise time VCC = 14 V, IC = 10 A RG = 1 kΩ, VGE = 5 V 1 5.8 µs µs td(on) tr Resistive load Turn-on delay time Rise time VCC = 14 V, IC = 10 A RG = 1 kΩ, VGE = 5 V, TC = 150 °C 1 5.9 µs µs td(off) tf dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope VCC = 300 V, L = 1 mH RG = 1 kΩ, VGE = 5 V 14 6.7 90 µs µs V/µs td(off) tf dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope VCC = 300 V, L = 1 mH RG = 1 kΩ, VGE = 5 V TC = 150 °C 15 9.8 80 µs µs V/µs |
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